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Tuesday, October 29, 2019
12:00 pm
Presenter: Eric Pop
This talk will present recent highlights from our research on two-dimensional (2D) materials including graphene, boron nitride (h-BN), and transition metal dichalcogenides (TMDs). The results span from material growth and fundamental measurements, to simulations, devices and system-oriented applications that take advantage of unusual 2D material properties. We have grown monolayer 2D semiconductors over large areas, including MoS2 [1], WSe2, and MoSe2 [2]. We also uncovered that ZrSe2 and HfSe2 have native high-¿ dielectrics ZrO2 and HfO2, which are of key technological relevance [3]. Improved electrical contacts [4] led to the realization of 10 nm monolayer MoS2 transistors with the highest current reported to date, near ballistic limits [5]. These could play a role in 3D heterogeneous integration of Nano electronics, which presents significant advantages for energy-efficient computation [6]. In less conventional applications, we utilized 2D materials as computing fabrics for analog dot product circuits [7], as highly efficient thermal insulators [8], and as the basis of thermal transistors [9]. The last two examples could enable control of heat in "thermal circuits" analogous with electrical circuits. Combined, these studies reveal fundamental limits and some unusual applications of 2D materials, which take advantage of their unique properties.